Product Overview
Product Category: | Integrated Circuits (ICs) Memory |
Kynix Part #: | KY32-MT46V16M16P-6TIT K |
Manufacturer Part#: | MT46V16M16P-6TIT K |
Manufacturer | Micron Technology |
Description: | IC DRAM 256M PARALLEL 66TSOP |
Package: | 66TSOP |
Datasheet: | |
Stock: | Yes |
Quantity: | 1019 PCS PCS |
MT46V16M16P-6TIT K Images are for reference only:
Product Specifications
Mfr Package Description | 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 |
REACH Compliant | Yes |
EU RoHS Compliant | Yes |
Status | Discontinued |
Sub Category | DRAMs |
Access Mode | FOUR BANK PAGE BURST |
Access Time-Max | 0.7 ns |
Clock Frequency-Max (fCLK) | 167.0 MHz |
Interleaved Burst Length | 2,4,8 |
I/O Type | COMMON |
JESD-30 Code | R-PDSO-G66 |
JESD-609 Code | e3 |
Memory Density | 2.68435456E8 bit |
Memory IC Type | DDR DRAM |
Memory Width | 16 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 66 |
Number of Words | 1.6777216E7 words |
Number of Words Code | 16M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Min | -40.0 Cel |
Operating Temperature-Max | 85.0 Cel |
Organization | 16MX16 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP |
Package Equivalence Code | TSSOP66,.46 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Peak Reflow Temperature (Cel) | 260 |
Qualification Status | Not Qualified |
Refresh Cycles | 8192.0 |
Seated Height-Max | 1.2 mm |
Sequential Burst Length | 2,4,8 |
Standby Current-Max | 0.004 Amp |
Supply Current-Max | 0.27 Amp |
Supply Voltage-Nom (Vsup) | 2.6 V |
Supply Voltage-Min (Vsup) | 2.5 V |
Supply Voltage-Max (Vsup) | 2.7 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | Matte Tin (Sn) |
Terminal Form | GULL WING |
Terminal Pitch | 0.65 mm |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 |
Length | 22.22 mm |
Width | 10.16 mm |
Additional Feature | AUTO/SELF REFRESH |
Categories | Integrated Circuits (ICs) Memory |
Manufacturer | Micron Technology Inc. |
Series | - |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR |
Memory Size | 256Mb (16M x 16) |
Memory Interface | Parallel |
Clock Frequency | 167MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 700ps |
Voltage - Supply | 2.3V ~ 2.7V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package | 66-TSOP |
Base Part Number | MT46V16M16 |
MT46V16M16P-6TIT K Datasheet PDF Download:
Pin Assignments
Fig. 1 66-Pin TSOP Pin Assignments (Top View)
Description
There is no relevant information available for this part yet.
Features
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)1
• Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synchronous data capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two – one per byte)
• Programmable burst lengths (BL): 2, 4, or 8
• Auto refresh– 64ms, 8192-cycle
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2-compatible)
• Concurrent auto precharge option supported
• tRAS lockout supported (tRAP = tRCD)
Other data sheets within the file:
Part Number | MT46V16M16P-6TIT K |
Descriptions | DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP Tray |
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