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Oct 8 2019

MT29F4G16ABADAH4-IT:D Datasheet PDF - IC FLASH 4G PARALLEL 63VFBGA MICRON

Product Overview

Product Category:

Memory

Kynix Part #:

KY32-MT29F4G16ABADAH4-IT:D

Manufacturer Part#:

MT29F4G16ABADAH4-IT:D

Manufacturer

Micron Technology Inc.

Description:

IC FLASH 4GBIT 63VFBGA

Package:

63-VFBGA

Datasheet:

MT29F4G16ABADAH4-IT:D Datasheet

Stock:

Yes

Quantity:

1989 PCS


MT29F4G16ABADAH4-IT:D Images are for reference only:

MT29F4G16ABADAH4-IT:D Image 

Product Specifications 

Categories

Integrated Circuits (ICs)

Embedded - Microcontrollers

Series

-

Status

Obsolete

EU RoHS Compliant

Yes

REACH Compliant

Yes

China RoHS Compliant

Yes

Package Description

9 X 11 MM, 1 MM HEIGHT, VFBGA-63

Access Time-Max

25 ns

Address Bus Width

29 Bit

Brand

NXP / Freescale

Base Part Number

MT29F4G16

Block Organization

Symmetrical

Boot Block

No

Block Organization

Symmetrical

Core Architecture

Sectored

Command User Interface

Yes

Command Compatible

No

Chip Density (bit)

4G

Cell Type

SLC NAND

Density

4 Gbit

Data Polling

No

ECC Support

Yes

ECCN (US)

3A991.b.1.a

Minimum Endurance (Cycles)

100000(Typ)

Erase Suspend/Resume Modes Support

No

Halogen Free

Halogen Free

HTS

8542.32.00.36

Interface Type

Parallel

JESD-30 Code

R-PBGA-B63

Maximum Erase Time

0.003/Block s

Memory Interface

Parallel

Memory Format

FLASH

Max Processing Temp

260

Maximum Erase Time

0.003/Block s

Maximum Operating Current

35 mA

Maximum Programming Time

0.6/Page ms

Maximum Random Access Time

25 ns

Mounting Style

SMD/SMT

Memory IC Type

FLASH

Memory Width

16

Number of Bits per Word

16 Bit

Number of Functions

1

Number of Sectors/Size

4 K

Number of Pins

63

Number of Functions

1

Number of Sectors/Size

4 K

Number of Terminals

63

Number of Words

2.68435456E8 words

Number of Words Code

256 M

Height

0.65 mm

Length

11 mm

Width

9 mm

Operating Mode

ASYNCHRONOUS

Organization

256MX16

Oscillator Type

Internal

Operating Current

35 mA

Operating Temperature

-40°C ~ 85°C (TA)

Packaging

Tray

Programmability

Yes

Product Dimensions

11 x 9 x 0.65 mm

Pbfree Code

Yes

Page Size

1K words

Program Current

35 mA

Program Memory Type

FLASH, NAND, SLC NAND

Program Memory Size

4Gb (256M x 16)

Package / Case

63-VFBGA

Supplier Device Package

63-VFBGA (9x11)

PCB changed

63

Package Body Material

PLASTIC/EPOXY

Package Code

VFBGA

Package Equivalence Code

BGA63,10X12,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Program Current

35 mA

Parallel/Serial

PARALLEL

Qualification Status

Not Qualified

REACH SVHC

No SVHC

Radiation Hardening

No

RoHS

Compliant

Rohs Code

Yes

ROM Programmability

FLASH

Risk Rank

5.82

Ready/Busy

Yes

Sector Size

64 K

Simultaneous Read/Write Support

No

Support of Common Flash Interface

No

Support of Page Mode

No

Screening Level

Industrial

Seated Height-Max

1.0 mm

Supply Current-Max

1.0E-4 Amp

Supply Voltage-Max

3.6 V

Supply Voltage-Min

2.7 V

Supply Voltage-Nom

3.3 V

Simultaneous Read/Write Support

No

Sync/Async

Asynchronous

Standby Current-Max

0.0001 A

Subcategory

Flash Memories

Technology

FLASH - NAND

Timing Type

Asynchronous

Terminal Finish

Tin/Silver/Copper

Terminal Form

BALL

Terminal Pitch

0.8 mm

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

30

Toggle Bit

No

Type

NAND TYPE

Word Size

16 b

Lead Free Status / RoHS Status

Lead free / ROHS3 Compliant

Moisture Sensitivity Level (MSL)

3 (168 Hours)


MT29F4G16ABADAH4-IT:D Datasheet PDF Download:

MT29F4G16ABADAH4-IT:D Datasheet PDF

Pinouts

48-Pin TSOP – Type 1 (Top View) 

Notes:

1. These pins might not be bonded in the package; however, Micron recommends that the customer connect these pins to the designated external sources for ONFI compatibility.

2. For the 3V device, pin 38 is DNU. For the 1.8V device, pin 38 is LOCK.

3. R/B2# and CE2# are available on 16Gb devices only. They are NC for other configurations.

Fig. 1 48-Pin TSOP – Type 1 (Top View)

63-Ball VFBGA, x8 (Balls Down, Top View) 

Notes:

1. For the 3V device, G5 changes to DNU. NO LOCK function is available on the 3.3V device.

2. These pins might not be bonded in the package; however, Micron recommends that the customer connect these pins to the designated external sources for ONFI compatibility.

Fig. 2 63-Ball VFBGA, x8 (Balls Down, Top View)

63-Ball VFBGA, x16 (Balls Down, Top View) 

Note:

For the 3V device, G5 changes to DNU. NO LOCK function is available on the 3.3V device.

Fig. 3 63-Ball VFBGA, x16 (Balls Down, Top View)

Description

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization. This device has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.

Features

Open NAND Flash Interface (ONFI) 1.0-compliant1

Single-level cell (SLC) technology

Organization

  • Page size x8: 2112 bytes (2048 + 64 bytes)

  • Page size x16: 1056 words (1024 + 32 words)

  • Block size: 64 pages (128K + 4K bytes)

  • Plane size: 2 planes x 2048 blocks per plan

  • Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks

Asynchronous I/O performance

  • tRC/tWC: 20ns (3.3V), 25ns (1.8V)

Array performance

  • Read page: 25µs 3

  • Program page: 200µs (TYP: 1.8V, 3.3V)3

  • Erase block: 700µs (TYP)

Command set: ONFI NAND Flash Protocol

Advanced command set

  • Program page cache mode4

  • Read page cache mode 4

  • One-time programmable (OTP) mode

  • Two-plane commands 4

  • Interleaved die (LUN) operations

  • Read unique ID

  • Block lock (1.8V only)

  • Internal data move

Operation status byte provides software method for detecting

  • Operation completion

  • Pass/fail condition

  • Write-protect status

Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion

WP# signal: Write protect entire device

First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management.

Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000

RESET (FFh) required as first command after power on

Alternate method of device initialization (Nand_Init) after power up (contact factory)

Internal data move operations supported within the plane from which data is read

Quality and reliability

  • Data retention: 10 years

  • Endurance: 100,000 PROGRAM/ERASE cycles

Operating voltage range

  • VCC: 2.7–3.6V

  • VCC: 1.7–1.95V

Operating temperature:

  • Commercial: 0°C to +70°C

  • Industrial (IT): –40ºC to +85ºC

Package

  • 48-pin TSOP type 1, CPL2

  • 63-ball VFBGA

Other data sheets within the file:

Part Number

MT29F4G16

Description

SLC NAND Flash Parallel 3.3V 4G-bit 256M x 16 25ns 63-Pin VFBGA

MT29F4G16


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