Product Overview
Product Category: | Memory |
Kynix Part #: | KY32-MT29F4G16ABADAH4-IT:D |
Manufacturer Part#: | MT29F4G16ABADAH4-IT:D |
Manufacturer | Micron Technology Inc. |
Description: | IC FLASH 4GBIT 63VFBGA |
Package: | 63-VFBGA |
Datasheet: | |
Stock: | Yes |
Quantity: | 1989 PCS |
MT29F4G16ABADAH4-IT:D Images are for reference only:
Product Specifications
Categories | Integrated Circuits (ICs) Embedded - Microcontrollers |
Series | - |
Status | Obsolete |
EU RoHS Compliant | Yes |
REACH Compliant | Yes |
China RoHS Compliant | Yes |
Package Description | 9 X 11 MM, 1 MM HEIGHT, VFBGA-63 |
Access Time-Max | 25 ns |
Address Bus Width | 29 Bit |
Brand | NXP / Freescale |
Base Part Number | MT29F4G16 |
Block Organization | Symmetrical |
Boot Block | No |
Block Organization | Symmetrical |
Core Architecture | Sectored |
Command User Interface | Yes |
Command Compatible | No |
Chip Density (bit) | 4G |
Cell Type | SLC NAND |
Density | 4 Gbit |
Data Polling | No |
ECC Support | Yes |
ECCN (US) | 3A991.b.1.a |
Minimum Endurance (Cycles) | 100000(Typ) |
Erase Suspend/Resume Modes Support | No |
Halogen Free | Halogen Free |
HTS | 8542.32.00.36 |
Interface Type | Parallel |
JESD-30 Code | R-PBGA-B63 |
Maximum Erase Time | 0.003/Block s |
Memory Interface | Parallel |
Memory Format | FLASH |
Max Processing Temp | 260 |
Maximum Erase Time | 0.003/Block s |
Maximum Operating Current | 35 mA |
Maximum Programming Time | 0.6/Page ms |
Maximum Random Access Time | 25 ns |
Mounting Style | SMD/SMT |
Memory IC Type | FLASH |
Memory Width | 16 |
Number of Bits per Word | 16 Bit |
Number of Functions | 1 |
Number of Sectors/Size | 4 K |
Number of Pins | 63 |
Number of Functions | 1 |
Number of Sectors/Size | 4 K |
Number of Terminals | 63 |
Number of Words | 2.68435456E8 words |
Number of Words Code | 256 M |
Height | 0.65 mm |
Length | 11 mm |
Width | 9 mm |
Operating Mode | ASYNCHRONOUS |
Organization | 256MX16 |
Oscillator Type | Internal |
Operating Current | 35 mA |
Operating Temperature | -40°C ~ 85°C (TA) |
Packaging | Tray |
Programmability | Yes |
Product Dimensions | 11 x 9 x 0.65 mm |
Pbfree Code | Yes |
Page Size | 1K words |
Program Current | 35 mA |
Program Memory Type | FLASH, NAND, SLC NAND |
Program Memory Size | 4Gb (256M x 16) |
Package / Case | 63-VFBGA |
Supplier Device Package | 63-VFBGA (9x11) |
PCB changed | 63 |
Package Body Material | PLASTIC/EPOXY |
Package Code | VFBGA |
Package Equivalence Code | BGA63,10X12,32 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Program Current | 35 mA |
Parallel/Serial | PARALLEL |
Qualification Status | Not Qualified |
REACH SVHC | No SVHC |
Radiation Hardening | No |
RoHS | Compliant |
Rohs Code | Yes |
ROM Programmability | FLASH |
Risk Rank | 5.82 |
Ready/Busy | Yes |
Sector Size | 64 K |
Simultaneous Read/Write Support | No |
Support of Common Flash Interface | No |
Support of Page Mode | No |
Screening Level | Industrial |
Seated Height-Max | 1.0 mm |
Supply Current-Max | 1.0E-4 Amp |
Supply Voltage-Max | 3.6 V |
Supply Voltage-Min | 2.7 V |
Supply Voltage-Nom | 3.3 V |
Simultaneous Read/Write Support | No |
Sync/Async | Asynchronous |
Standby Current-Max | 0.0001 A |
Subcategory | Flash Memories |
Technology | FLASH - NAND |
Timing Type | Asynchronous |
Terminal Finish | Tin/Silver/Copper |
Terminal Form | BALL |
Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 30 |
Toggle Bit | No |
Type | NAND TYPE |
Word Size | 16 b |
Lead Free Status / RoHS Status | Lead free / ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
MT29F4G16ABADAH4-IT:D Datasheet PDF Download:
Pinouts
Notes:
1. These pins might not be bonded in the package; however, Micron recommends that the customer connect these pins to the designated external sources for ONFI compatibility.
2. For the 3V device, pin 38 is DNU. For the 1.8V device, pin 38 is LOCK.
3. R/B2# and CE2# are available on 16Gb devices only. They are NC for other configurations.
Fig. 1 48-Pin TSOP – Type 1 (Top View)
Notes:
1. For the 3V device, G5 changes to DNU. NO LOCK function is available on the 3.3V device.
2. These pins might not be bonded in the package; however, Micron recommends that the customer connect these pins to the designated external sources for ONFI compatibility.
Fig. 2 63-Ball VFBGA, x8 (Balls Down, Top View)
Note:
For the 3V device, G5 changes to DNU. NO LOCK function is available on the 3.3V device.
Fig. 3 63-Ball VFBGA, x16 (Balls Down, Top View)
Description
Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization. This device has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.
Features
Open NAND Flash Interface (ONFI) 1.0-compliant1
Single-level cell (SLC) technology
Organization
Page size x8: 2112 bytes (2048 + 64 bytes)
Page size x16: 1056 words (1024 + 32 words)
Block size: 64 pages (128K + 4K bytes)
Plane size: 2 planes x 2048 blocks per plan
Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks
Asynchronous I/O performance
tRC/tWC: 20ns (3.3V), 25ns (1.8V)
Array performance
Read page: 25µs 3
Program page: 200µs (TYP: 1.8V, 3.3V)3
Erase block: 700µs (TYP)
Command set: ONFI NAND Flash Protocol
Advanced command set
Program page cache mode4
Read page cache mode 4
One-time programmable (OTP) mode
Two-plane commands 4
Interleaved die (LUN) operations
Read unique ID
Block lock (1.8V only)
Internal data move
Operation status byte provides software method for detecting
Operation completion
Pass/fail condition
Write-protect status
Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
WP# signal: Write protect entire device
First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management.
Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
RESET (FFh) required as first command after power on
Alternate method of device initialization (Nand_Init) after power up (contact factory)
Internal data move operations supported within the plane from which data is read
Quality and reliability
Data retention: 10 years
Endurance: 100,000 PROGRAM/ERASE cycles
Operating voltage range
VCC: 2.7–3.6V
VCC: 1.7–1.95V
Operating temperature:
Commercial: 0°C to +70°C
Industrial (IT): –40ºC to +85ºC
Package
48-pin TSOP type 1, CPL2
63-ball VFBGA
Other data sheets within the file:
Part Number | |
Description | SLC NAND Flash Parallel 3.3V 4G-bit 256M x 16 25ns 63-Pin VFBGA |