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May 14 2019

MRFE6S9205HR3 Datasheet PDF - FET RF 66V NI-880 NXP FREESCALE

Product Overview

Product Category:

RF FETs

Kynix Part #:

KY32-MRFE6S9205HR3

Manufacturer Part#:

MRFE6S9205HR3

Manufacturer

NXP USA Inc.

Description:

FET RF 66V 880MHZ NI-880

Package:

NI-880

Datasheet:

MRFE6S9205HR3 Datasheet

Stock:

Yes

Quantity:

128 PCS


MRFE6S9205HR3 Images are for reference only:

MRFE6S9205HR3 Image

Product Specifications 

Categories

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - RF

Series

-

Packaging

Tape & Reel (TR)

Part Status

Obsolete

Transistor Type

LDMOS

Frequency

880MHz

Gain

21.2dB

Voltage - Test

28V

Channel Mode

Enhancement

Current Rating (Amps)

-

Configuration

Single

Height

5.08 mm

Length

34.16 mm

Width

13.8 mm

Mounting Style

SMD/SMT

Minimum Operating Temperature 

- 65 C

Maximum Operating Temperature

+ 150 C

Noise Figure

-

Current - Test

1.4A

Power - Output

58W

Vds - Drain-Source Breakdown Voltage

66 V

Vgs - Gate-Source Voltage

- 0.5 V, 12 V

Package / Case

NI-880

Supplier Device Package

NI-880

Product Category

RF MOSFET Transistors

Packaging

Cut Tape

Packaging

Reel

Product Type

RF MOSFET Transistors

Subcategory

MOSFETs

Transistor Polarity

N-Channel

Technology

Si

Base Part Number

MRFE6S9205

Brand

NXP / Freescale

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)


MRFE6S9205HR3 Datasheet PDF Download: 

MRFE6S9205HR3 Datasheet PDF

Circuit Schematic

MRFE6S9205HR3(HSR3) Test Circuit Schematic

Fig. 1 MRFE6S9205HR3(HSR3) Test Circuit Schematic

MRFE6S9205HR3(HSR3) Test Circuit Component Layout

Fig. 2 MRFE6S9205HR3(HSR3) Test Circuit Component Layout

Description

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

Power Gain ó 21.2 dB

Drain Efficiency ó 34%

Device Output Signal PAR ó 6.3 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset ó -39.1 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 260 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Other data sheets within the file:

Part Number

MRFE6S9205HR3/HSR3

Description

RF Mosfet LDMOS 28V 1.4A 880MHz 21.2dB 58W NI-880

MRFE6S9205HR3/HSR3


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