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Apr 24 2019

MRFE6S9060NR1 Datasheet PDF - FET RF 66V 880MHZ TO270-2 FLASH TRAY

Product Overview

Product Category:

RF FETs

Kynix Part #:

KY56-MRFE6S9060NR1

Manufacturer Part#:

MRFE6S9060NR1

Manufacturer

NXP USA Inc.

Description:

FET RF 66V 880MHZ TO270-2

Package:

TO-270

Datasheet:

MRFE6S9060NR1 Datasheet

Stock:

Yes

Quantity:

830 PCS


MRFE6S9060NR1 Images are for reference only:

MRFE6S9060NR1 Image

Product Specifications

Package Description

ROHS COMPLIANT, PLASTIC, CASE 1265-09, TO-270-2, 3 PIN

Automotive

No

Status

Transferred

Part Status

Active

HTS

8541.29.00.95

Case Connection

SOURCE

Configuration

SINGLE

Channel Mode

Enhancement

Channel Type

N

DS Breakdown Voltage-Min

66.0 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Highest Frequency

Band ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code

TO-270AA

JESD-30 Code

R-PDFM-F2

JESD-609 Code

e3

Moisture Sensitivity Level

3

Mode of Operation

CW|1-Carrier N-CDMA|GSM EDGE

Maximum Drain Source Voltage

66 V

Maximum Gate Source Voltage

12 V

Maximum VSWR

10

Maximum Frequency

1000 MHz

Minimum Operating Temperature

-65 °C

Maximum Operating Temperature

225 °C

Military

No

Mounting

Surface Mount

Number of Elements per Chip

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Product Dimensions

9.7 x 6.15 x 2.08 mm

Packaging

Tape and Reel

Pin Count

3

PCB changed

3

Package Body Material

PLASTIC/EPOXY

Package Shape 

RECTANGULAR

Package Style

FLANGE MOUNT

Peak Reflow Temperature

260 °C

Polarity/Channel Type

N-CHANNEL

Standard Package Name

TO-270

Supplier Package

TO-270

Qualification Status

Not Qualified

Output Power (W)

14

Sub Category

FET General Purpose Power

Surface Mount

Yes

Terminal Finish

Matte Tin (Sn)

Terminal Form

FLAT

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max

40 s

Transistor Application

AMPLIFIER

Transistor Element Material

SILICON

Typical Input Capacitance @ Vds (pF)

109@28V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.1@28V

Typical Output Capacitance @ Vds (pF)

33@28V

Typical Power Gain (dB)

21.1

Typical Drain Efficiency (%)

33

Base Part Number

MRFE6S9060

Lead Shape

Flat

EU RoHS Compliant 

Yes

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Moisture Sensitivity Level (MSL)

3 (168 Hours)


MRFE6S9060NR1 Datasheet PDF Download: 

MRFE6S9060NR1 Datasheet PDF

Circuit Schematic

MRFE6S9060NR1 Test Circuit Schematic

Fig. 1 MRFE6S9060NR1 Test Circuit Schematic

MRFE6S9060NR1 Test Circuit Component Layout

Fig. 2 MRFE6S9060NR1 Test Circuit Component Layout


Description

The MRFE6S9060NR1 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

Features

Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain: 21.1 dB

Drain Efficiency: 33%

ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth

Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

GSM EDGE Application

Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (920-960 MHz)

    Power Gain: 20 dB

    Drain Efficiency: 46% 

    Spectral Regrowth @ 400 kHz Offset = –62 dBc

    Spectral Regrowth @ 600 kHz Offset = –78 dBc

    EVM: 1.5% rms

GSM Application

Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (920-960 MHz)

    Power Gain: 20 dB

    Drain Efficiency: 63%

Characterized with Series Equivalent Large-Signal Impedance Parameters

Integrated ESD Protection

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Other data sheets within the file:

Datasheet

MRFE6S9060NR1 Datasheet

MRFE6S9060NR1 Datasheet

MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET (REV 1)

MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET (REV 1)

PCN

Customer Information Notification

Customer Information Notification

Test/Quality Data

Material Composition

Material Composition

RoHS Certificate of Analysis

RoHS Certificate of Analysis

Statement on EU REACH Provisions

Statement on EU REACH Provisions



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