Product Overview
Product Category: | RF FETs |
Kynix Part #: | KY56-MRFE6S9060NR1 |
Manufacturer Part#: | MRFE6S9060NR1 |
Manufacturer | NXP USA Inc. |
Description: | FET RF 66V 880MHZ TO270-2 |
Package: | TO-270 |
Datasheet: | |
Stock: | Yes |
Quantity: | 830 PCS |
MRFE6S9060NR1 Images are for reference only:
Product Specifications
Package Description | ROHS COMPLIANT, PLASTIC, CASE 1265-09, TO-270-2, 3 PIN |
Automotive | No |
Status | Transferred |
Part Status | Active |
HTS | 8541.29.00.95 |
Case Connection | SOURCE |
Configuration | SINGLE |
Channel Mode | Enhancement |
Channel Type | N |
DS Breakdown Voltage-Min | 66.0 V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency | Band ULTRA HIGH FREQUENCY BAND |
JEDEC-95 Code | TO-270AA |
JESD-30 Code | R-PDFM-F2 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 3 |
Mode of Operation | CW|1-Carrier N-CDMA|GSM EDGE |
Maximum Drain Source Voltage | 66 V |
Maximum Gate Source Voltage | 12 V |
Maximum VSWR | 10 |
Maximum Frequency | 1000 MHz |
Minimum Operating Temperature | -65 °C |
Maximum Operating Temperature | 225 °C |
Military | No |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE |
Product Dimensions | 9.7 x 6.15 x 2.08 mm |
Packaging | Tape and Reel |
Pin Count | 3 |
PCB changed | 3 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Peak Reflow Temperature | 260 °C |
Polarity/Channel Type | N-CHANNEL |
Standard Package Name | TO-270 |
Supplier Package | TO-270 |
Qualification Status | Not Qualified |
Output Power (W) | 14 |
Sub Category | FET General Purpose Power |
Surface Mount | Yes |
Terminal Finish | Matte Tin (Sn) |
Terminal Form | FLAT |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max | 40 s |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Typical Input Capacitance @ Vds (pF) | 109@28V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 1.1@28V |
Typical Output Capacitance @ Vds (pF) | 33@28V |
Typical Power Gain (dB) | 21.1 |
Typical Drain Efficiency (%) | 33 |
Base Part Number | MRFE6S9060 |
Lead Shape | Flat |
EU RoHS Compliant | Yes |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
MRFE6S9060NR1 Datasheet PDF Download:
Circuit Schematic
Fig. 1 MRFE6S9060NR1 Test Circuit Schematic
Fig. 2 MRFE6S9060NR1 Test Circuit Component Layout
Description
The MRFE6S9060NR1 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Features
l Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 21.1 dB
Drain Efficiency: 33%
ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth
l Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
GSM EDGE Application
l Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (920-960 MHz)
Power Gain: 20 dB
Drain Efficiency: 46%
Spectral Regrowth @ 400 kHz Offset = –62 dBc
Spectral Regrowth @ 600 kHz Offset = –78 dBc
EVM: 1.5% rms
GSM Application
l Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (920-960 MHz)
Power Gain: 20 dB
Drain Efficiency: 63%
l Characterized with Series Equivalent Large-Signal Impedance Parameters
l Integrated ESD Protection
l 225°C Capable Plastic Package
l RoHS Compliant
l In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Other data sheets within the file:
Datasheet | |
MRFE6S9060NR1 Datasheet |  |
MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET (REV 1) |  |
PCN | |
Customer Information Notification |  |
Test/Quality Data | |
Material Composition |  |
RoHS Certificate of Analysis |  |
Statement on EU REACH Provisions |  |
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