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Jul 13 2019

MRF8S9260HR3 Datasheet PDF – FET RF N-CH 960MHZ 70V NI-880H FREESCALE

Product Overview

Product Category:

RF FETs

Kynix Part #:

KY56-MRF8S9260HR3

Manufacturer Part#:

MRF8S9260HR3

Manufacturer

FREESCALE

Description:

FET RF N-CH 960MHZ 70V NI-880H

Package:

NI-880

Datasheet:

MRF8S9260HR3 Datasheet

Stock:

Yes

Quantity:

72 PCS

MRF8S9260HR3 Images are for reference only:

MRF8S9260HR3


Product Specifications

Product Category

RF FETs

Manufacturer

FREESCALE

Series

-

Packaging

Tape & Reel (TR)

Package-Case

NI-880

Current - Test

1.7 A

Current Rating

-

Configuration

SINGLE

Case Connection

SOURCE

DS Breakdown Voltage-Min

70.0 V

EU RoHS Compliant

Yes

Frequency

960 MHz

FET Technology

METAL-OXIDE SEMICONDUCTOR

Gain

18.6 dB

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND

JESD-30 Code

R-CDFM-F2

Mounting Style

SMD/SMT

Moisture Sensitivity Level

3 (168 Hours)

Noise Figure

-

Number of Elements

1.0

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

225.0°C

Product Type

RF MOSFET Transistors

Power - Output

75 W

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Polarity/Channel Type

N-CHANNEL

Peak Reflow Temperature

NOT APPLICABLE

Sub Category

FET General Purpose Power

Surface Mount

Yes

Supplier Device Package

NI-880

Technology

Si

Transistor Type

LDMOS

Transistor Polarity

N-Channel

Terminal Form

FLAT

Terminal Position

DUAL

Transistor Application

AMPLIFIER

Transistor Element Material

SILICON

Time@Peak Reflow Temperature-Max

NOT APPLICABLE

Voltage - Test

28 V

Voltage - Rated

70 V

Vgs - Gate-Source Voltage

10 V

Vgs th - Gate-Source Threshold Voltage

2.3 V

Vds - Drain-Source Breakdown Voltage

70 V

Unit Weight

0.343346 oz


MRF8S9260HR3 Datasheet PDF Download:

MRF8S9260HR3 Datasheet PDF

MRF8S9260HR3(HSR3) Test Circuit Component Layout

Figure 1. MRF8S9260HR3(HSR3) Test Circuit Component Layout

Fig.1  MRF8S9260HR3(HSR3) Test Circuit Component Layout


Description

Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

· Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

· Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

· Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW

Features

· 100% PAR Tested for Guaranteed Output Power Capability

· Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

· Internally Matched for Ease of Use

· Integrated ESD Protection

· Greater Negative Gate--Source Voltage Range for Improved Class C Operation

· Optimized for Doherty Applications

· In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Other data sheets within the file:

Datasheet

MRF8S9260HR3 Datasheet

MRF8S9260HR3 Datasheet

PCN Obsolescence/ EOL

Multiple Devices 23/Jan/2015

Multiple Devices 23/Jan/2015


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