MRF8S9260HR3 Datasheet PDF – FET RF N-CH 960MHZ 70V NI-880H FREESCALE

Product Overview

Product Category:	RF FETs
Kynix Part #:	KY56-MRF8S9260HR3
Manufacturer Part#:	MRF8S9260HR3
Manufacturer	FREESCALE
Description:	FET RF N-CH 960MHZ 70V NI-880H
Package:	NI-880
Datasheet:	MRF8S9260HR3 Datasheet
Stock:	Yes
Quantity:	72 PCS

MRF8S9260HR3 Images are for reference only:

MRF8S9260HR3

Product Specifications

Product Category	RF FETs
Manufacturer	FREESCALE
Series	-
Packaging	Tape & Reel (TR)
Package-Case	NI-880
Current - Test	1.7 A
Current Rating	-
Configuration	SINGLE
Case Connection	SOURCE
DS Breakdown Voltage-Min	70.0 V
EU RoHS Compliant	Yes
Frequency	960 MHz
FET Technology	METAL-OXIDE SEMICONDUCTOR
Gain	18.6 dB
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
JESD-30 Code	R-CDFM-F2
Mounting Style	SMD/SMT
Moisture Sensitivity Level	3 (168 Hours)
Noise Figure	-
Number of Elements	1.0
Number of Terminals	2
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	225.0°C
Product Type	RF MOSFET Transistors
Power - Output	75 W
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL
Peak Reflow Temperature	NOT APPLICABLE
Sub Category	FET General Purpose Power
Surface Mount	Yes
Supplier Device Package	NI-880
Technology	Si
Transistor Type	LDMOS
Transistor Polarity	N-Channel
Terminal Form	FLAT
Terminal Position	DUAL
Transistor Application	AMPLIFIER
Transistor Element Material	SILICON
Time@Peak Reflow Temperature-Max	NOT APPLICABLE
Voltage - Test	28 V
Voltage - Rated	70 V
Vgs - Gate-Source Voltage	10 V
Vgs th - Gate-Source Threshold Voltage	2.3 V
Vds - Drain-Source Breakdown Voltage	70 V
Unit Weight	0.343346 oz

MRF8S9260HR3 Datasheet PDF Download:

MRF8S9260HR3(HSR3) Test Circuit Component Layout

Fig.1 MRF8S9260HR3(HSR3) Test Circuit Component Layout

Description

Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

· Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

· Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

· Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW

Features

· 100% PAR Tested for Guaranteed Output Power Capability

· Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

· Internally Matched for Ease of Use

· Integrated ESD Protection

· Greater Negative Gate--Source Voltage Range for Improved Class C Operation

· Optimized for Doherty Applications

· In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Other data sheets within the file: