Product Overview
Product Category: | RF FETs |
Kynix Part #: | KY56-MRF8S9260HR3 |
Manufacturer Part#: | MRF8S9260HR3 |
Manufacturer | FREESCALE |
Description: | FET RF N-CH 960MHZ 70V NI-880H |
Package: | NI-880 |
Datasheet: | |
Stock: | Yes |
Quantity: | 72 PCS |
MRF8S9260HR3 Images are for reference only:
Product Specifications
Product Category | RF FETs |
Manufacturer | FREESCALE |
Series | - |
Packaging | Tape & Reel (TR) |
Package-Case | NI-880 |
Current - Test | 1.7 A |
Current Rating | - |
Configuration | SINGLE |
Case Connection | SOURCE |
DS Breakdown Voltage-Min | 70.0 V |
EU RoHS Compliant | Yes |
Frequency | 960 MHz |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Gain | 18.6 dB |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
JESD-30 Code | R-CDFM-F2 |
Mounting Style | SMD/SMT |
Moisture Sensitivity Level | 3 (168 Hours) |
Noise Figure | - |
Number of Elements | 1.0 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 225.0°C |
Product Type | RF MOSFET Transistors |
Power - Output | 75 W |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL |
Peak Reflow Temperature | NOT APPLICABLE |
Sub Category | FET General Purpose Power |
Surface Mount | Yes |
Supplier Device Package | NI-880 |
Technology | Si |
Transistor Type | LDMOS |
Transistor Polarity | N-Channel |
Terminal Form | FLAT |
Terminal Position | DUAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Time@Peak Reflow Temperature-Max | NOT APPLICABLE |
Voltage - Test | 28 V |
Voltage - Rated | 70 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 2.3 V |
Vds - Drain-Source Breakdown Voltage | 70 V |
Unit Weight | 0.343346 oz |
MRF8S9260HR3 Datasheet PDF Download:
MRF8S9260HR3(HSR3) Test Circuit Component Layout
Fig.1 MRF8S9260HR3(HSR3) Test Circuit Component Layout
Description
Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
· Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
· Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
· Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW
Features
· 100% PAR Tested for Guaranteed Output Power Capability
· Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
· Internally Matched for Ease of Use
· Integrated ESD Protection
· Greater Negative Gate--Source Voltage Range for Improved Class C Operation
· Optimized for Doherty Applications
· In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Other data sheets within the file:
Datasheet | |
MRF8S9260HR3 Datasheet | ![]() |
PCN Obsolescence/ EOL | |
Multiple Devices 23/Jan/2015 | ![]() |