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Apr 20 2019

MRF5S9100NR1 Datasheet PDF - RF Mosfet LDMOS FET RF 68V 880MHZ TO-270-4 WB-4

Product Overview

Product Category:

RF MOSFET Transistors

Kynix Part #:

KY32-MRF5S9100NR1

Manufacturer Part#:

MRF5S9100NR1

Manufacturer

NXP USA Inc.

Description:

FET RF 68V 880MHZ TO-270-4

Package:

TO-270AB

Datasheet:

MRF5S9100NR1 Datasheet

Stock:

Yes

Quantity:

910 PCS


MRF5S9100NR1 Images are for reference only:

MRF5S9100NR1 Image

Product Specifications

Categories

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - RF

Series

-

Product Type

RF MOSFET Transistors

Subcategory

MOSFETs

Brand

NXP / Freescale

Channel Mode

Enhancement

Configuration

Single

Gain

19.5 dB

Height

2.64 mm

Length

17.58 mm

Width

9.07 mm

Id - Continuous Drain Current

950 mA

Packaging

Cut Tape (CT)

Part Status

Obsolete

Type

RF Power MOSFET

Transistor Type

LDMOS

Transistor Polarity

N-Channel

Technology

Si

Frequency

880MHz

Gain  

19.5dB

Voltage - Test

26V

Vds - Drain-Source Breakdown Voltage

68V

Current Rating (Amps)

-

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Noise Figure

-

Current - Test

950mA

Power - Output

20W

Voltage - Rated

68V

Vgs - Gate-Source Voltage

- 0.5 V, 15 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Operating Frequency

1 GHz

Output Power

20 W

Package / Case

TO-270-4

Packaging

Cut Tape

Packaging

Reel

Package / Case

TO-270AB

Supplier Device Package

TO-270 WB-4

Pd - Power Dissipation

336 W

Base Part Number

MRF5S9100

Unit Weight

0.058073 oz

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Moisture Sensitivity Level (MSL)

3 (168 Hours)


MRF5S9100NR1 Datasheet PDF Download: 

MRF5S9100NR1 Datasheet PDF

Test Circuit Diagrams

MRF5S9100NR1 Test Circuit Schematic

Fig. 1 MRF5S9100NR1 Test Circuit Schematic

MRF5S9100NR1 Test Circuit Component Layout

Fig. 2 MRF5S9100NR1 Test Circuit Component Layout

Description

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pout = 20 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain ó 19.5 dB Drain Efficiency ó 28% ACPR @ 750 kHz Offset ó -46.8 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Other data sheets within the file:

Part Number

MRF5S9100MR1,MBR1

Description

RF Mosfet LDMOS 26V 950mA 880MHz 19.5dB 20W TO-270 WB-4

MRF5S9100MR1,MBR1 PDF


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