M29W800DT70N6F Datasheet PDF - IC FLASH 48TSOP STMicroelectronics

Product Overview

M29W800DT70N6F Images are for reference only:

Product Specifications 

M29W800DT70N6F Datasheet PDF Download:

Logic Diagram

Fig. 1 M29W800D Logic Diagram

Pin Assignments

Fig. 2 SO Connections and TSOP Connections

Fig. 3 TFBGA Connections (Top view through package)

Description

The M29W800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

Features

■ SUPPLY VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase and Read

■ ACCESS TIMES: 45, 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 19 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 16 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W800DT: 22D7h

– Bottom Device Code M29W800DB: 225Bh

Other data sheets within the file: