Product Overview
Product Category: | Memory |
Kynix Part #: | KY32-M29W800DT70N6F |
Manufacturer Part#: | M29W800DT70N6F |
Manufacturer | STMicroelectronics |
Description: | IC FLASH 8MBIT 70NS 48TSOP |
Package: | TSOP48 |
Datasheet: | |
Stock: | Yes |
Quantity: | 1049 PCS |
M29W800DT70N6F Images are for reference only:
Product Specifications
Access Time | 70ns |
Product Category | NOR Flash |
RoHS | Details |
Mounting Style | SMD/SMT |
Package/Case | TSOP-48 |
Series | M29W |
Memory Size | 8 Mbit |
Interface Type | Parallel |
Organisation | 1 M x 8, 512 k x 16 |
Timing Type | Asynchronous |
Data Bus Width | 8 bit, 16 bit |
Supply Voltage - Min | 2.7 V |
Supply Voltage - Max | 3.6 V |
Supply Current - Max | 10 mA |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 85 C |
Packaging | Cut Tape |
Packaging | Reel - TR |
Memory Type | NOR |
Speed | 70 ns |
Architecture | Block Erase |
Brand | STMicroelectronics |
Supply Voltage - Operating | 2.7 V to 3.6 V |
Product Type | NOR Flash |
Package / Case | 48-TSOP |
Standard | Common Flash Interface (CFI) |
Subcategory | Memory & Data Storage |
Technology | FLASH - NOR |
M29W800DT70N6F Datasheet PDF Download:
Logic Diagram
Fig. 1 M29W800D Logic Diagram
Pin Assignments
Fig. 2 SO Connections and TSOP Connections
Fig. 3 TFBGA Connections (Top view through package)
Description
The M29W800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
Features
■ SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and Read
■ ACCESS TIMES: 45, 70, 90ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
■ 19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 16 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W800DT: 22D7h
– Bottom Device Code M29W800DB: 225Bh
Other data sheets within the file:
Part Number | M29W800DT, M29W800DB |
Description | NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8/512K x 16 70ns 48-Pin TSOP T/R |