Product Overview
Product Category: | Memory |
Kynix Part #: | KY32-M29W400BB90N6 |
Manufacturer Part#: | M29W400BB90N6 |
Manufacturer | Micron Technology Inc. |
Description: | IC FLASH 4M PARALLEL 48TSOP |
Package: | TSOP |
Datasheet: | |
Stock: | Yes |
Quantity: | 4200 PCS |
M29W400BB90N6 Images are for reference only:
Product Specifications
Categories | Integrated Circuits (ICs) Memory |
Series | - |
Architecture | Block Erase |
Access Time | 90ns |
Data Bus Width | 8 bit, 16 bit |
Packaging | Tray |
Part Status | Obsolete |
Interface Type | Parallel |
Memory Type | Non-Volatile |
Memory Size | 4 Mbit |
Memory Format | FLASH |
Supply Current - Max | 10 mA |
Speed | 90 ns |
Standard | Not Supported |
Subcategory | Memory & Data Storage |
Technology | FLASH - NOR |
Timing Type | Asynchronous |
Technology | FLASH - NOR |
Memory Size | 4Mb (512K x 8, 256K x 16) |
Write Cycle Time - Word, Page | 90ns |
Access Time | 90ns |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | -40°C ~ 85°C (TA) |
Organisation | 512 k x 8, 256 k x 16 |
Mounting Type | Surface Mount |
Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package | 48-TSOP |
Base Part Number | M29W400 |
Brand | STMicroelectronics |
Product Type | NOR Flash |
Part Status | Obsolete |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
M29W400BB90N6 Datasheet PDF Download:
Logic Diagram
Fig. 1 M29W400BB Logic Diagram
Pin Assignments
Fig. 2 TSOP Connections (L) | SO Connections (R)
Description
The M29W400B is a 4 Mbit (512Kbx8 or 256Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W400B is fully backward compatible with the M29W400.
Features
■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
■ 11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W400BT: 00EEh
– Bottom Device Code M29W400BB: 00EFh
Other data sheets within the file:
Part Number | M29W400BT | M29W400BB |
Description | FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Parallel 90ns 48-TSOP |
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