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Apr 28 2019

M29W400BB90N6 Datasheet PDF - IC FLASH - NOR 4M PARALLEL 48TSOP

Product Overview

Product Category:

Memory

Kynix Part #:

KY32-M29W400BB90N6

Manufacturer Part#:

M29W400BB90N6

Manufacturer

Micron Technology Inc.

Description:

IC FLASH 4M PARALLEL 48TSOP

Package:

TSOP

Datasheet:

M29W400BB90N6 Datasheet

Stock:

Yes

Quantity:

4200 PCS


M29W400BB90N6 Images are for reference only:

M29W400BB90N6 Image

Product Specifications 

Categories

Integrated Circuits (ICs)

Memory

Series

-

Architecture

Block Erase

Access Time

90ns

Data Bus Width

8 bit, 16 bit

Packaging

Tray

Part Status

Obsolete

Interface Type

Parallel

Memory Type

Non-Volatile

Memory Size

4 Mbit

Memory Format

FLASH

Supply Current - Max

10 mA

Speed

90 ns

Standard

Not Supported

Subcategory

Memory & Data Storage

Technology

FLASH - NOR

Timing Type

Asynchronous

Technology

FLASH - NOR

Memory Size

4Mb (512K x 8, 256K x 16)

Write Cycle Time - Word, Page

90ns

Access Time

90ns

Memory Interface

Parallel

Voltage - Supply

2.7V ~ 3.6V

Operating Temperature

-40°C ~ 85°C (TA)

Organisation

512 k x 8, 256 k x 16

Mounting Type

Surface Mount

Package / Case

48-TFSOP (0.724", 18.40mm Width)

Supplier Device Package

48-TSOP

Base Part Number

M29W400

Brand

STMicroelectronics

Product Type

NOR Flash

Part Status

Obsolete

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Moisture Sensitivity Level (MSL)

3 (168 Hours)


M29W400BB90N6 Datasheet PDF Download: 

M29W400BB90N6 Datasheet PDF

Logic Diagram

M29W400BB Logic Diagram

Fig. 1 M29W400BB Logic Diagram


Pin Assignments

TSOP Connections (L) | SO Connections (R)

Fig. 2 TSOP Connections (L) | SO Connections (R)


Description

The M29W400B is a 4 Mbit (512Kbx8 or 256Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W400B is fully backward compatible with the M29W400.

Features

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 55ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 11 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 8 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION MODE

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W400BT: 00EEh

– Bottom Device Code M29W400BB: 00EFh

Other data sheets within the file:

Part Number

M29W400BT | M29W400BB

Description

FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Parallel 90ns 48-TSOP

M29W400BT | M29W400BB


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