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Apr 30 2019

M28W640FCB70N6E Datasheet PDF - NOR Flash PARELLEL STD FLASH 64 MEG TRAY STMICRO

Product Overview

Product Category:

Memory

Kynix Part #:

KY32-M28W640FCB70N6E

Manufacturer Part#:

M28W640FCB70N6E

Manufacturer

STMicroelectronics

Description:

NOR Flash STD FLASH 64 MEG

Package:

TSOP

Datasheet:

M28W640FCB70N6E Datasheet

Stock:

Yes

Quantity:

13670 PCS


M28W640FCB70N6E Images are for reference only:

M28W640FCB70N6E Image

Product Specifications 

Package Description

12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48

REACH Compliant

Yes

EU RoHS Compliant

Yes

China RoHS Compliant

Yes

Status

Discontinued

Type  

NOR TYPE

Sub Category

Flash Memories

Access Time-Max

70.0 ns

Boot Block

BOTTOM

Block Organisation

Asymmetrical

Command User Interface

Yes

Common Flash Interface

Yes

Data Polling

No

Dimensions

12 x 18.4 x 1mm

JESD-30 Code

R-PDSO-G48

JESD-609 Code

e3

Memory Density

6.7108864E7 bit

Memory IC Type

FLASH

Memory Width

16

Mounting

Surface Mount

Number of Functions

1

Number of Sectors/Size

8,127

Number of Terminals

48

Number of Words

4194304.0 words

Number of Words Code

4M

Number of Bits per Word

16bit

Operating Mode

ASYNCHRONOUS

Operating Temperature-Min

-40.0  Cel

Operating Temperature-Max

85.0  Cel

Organization

4MX16

Pin Count

48

Package Body Material

PLASTIC/EPOXY

Package Code

TSOP1

Package Equivalence Code

TSSOP48,.8,20

Package Shape 

RECTANGULAR

Package Style

SMALL OUTLINE, THIN PROFILE

Parallel/Serial

PARALLEL

Peak Reflow Temperature

260 Cel

Power Supplies

3/3.3 V

Programming Voltage

3 V

Qualification Status

Not Qualified

Seated Height-Max

1.2 mm

Sector Size (Words)

4K,32K

Standby Current-Max

5.0E-6 Amp

Supply Current-Max

0.02 Amp

Supply Voltage-Nom (Vsup)

3.0 V

Supply Voltage-Min (Vsup)

2.7 V

Supply Voltage-Max (Vsup)

3.6 V

Surface Mount

Yes

Technology

CMOS

Temperature Grade

INDUSTRIAL

Terminal Finish

MATTE TIN

Terminal Form

Gull-wing

Terminal Pitch

0.5 mm

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Toggle Bit

No

Length

18.4 mm

Width

12.0 mm

Height  

1 mm

Additional Feature

BOTTOM BOOT BLOCK


M28W640FCB70N6E Datasheet PDF Download: 

M28W640FCB70N6E Datasheet PDF

Pinouts

TSOP Connections

Fig. 1 TSOP Connections

TFBGA connections (top view through package)

Fig. 2 TFBGA connections (top view through package)


Description

The M28W640FCB family are 64 Mbit (4Mbit x 16) non-volatile Flash memories that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

Features

■ Supply voltage

– VDD = 2.7V to 3.6V Core Power Supply

– VDDQ= 1.65V to 3.6V for Input/Output

– VPP = 12V for fast Program (optional)

■ Access times: 70, 85, 90,100ns

■ Programming time:

– 10µs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ Common Flash Interface

■ Memory blocks

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ Block locking

– All blocks locked at Power Up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ Security

– 128 bit user Programmable OTP cells

– 64 bit unique device identifier

■ Automatic standby mode

■ Program and Erase Suspend

■ 100,000 program/erase cycles per block

■ Electronic signature

– Manufacturer code: 20h

– Top device code, M28W640FCT: 8848h

– Bottom device code, M28W640FCB: 8849h

Other data sheets within the file:

Part Number

M28W640FCT, M28W640FCB

Description

NOR Flash Parallel 3V/3.3V 64Mbit 4M x 16bit 70ns 48-Pin TSOP Tray

M28W640FCT, M28W640FCB


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