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May 20 2019

K6R1016V1D-TI10 Datasheet PDF - IC Chips TSOP SAMSUNG

K6R1016V1D-TI10 Datasheet PDF - SAMSUNG

Key words:

Product Overview

Product Category:

IC Chips

Kynix Part #:

KY32-K6R1016V1D-TI10

Manufacturer Part#:

K6R1016V1D-TI10

Manufacturer

SAMSUNG

Description:

-

Package:

TSOP

Datasheet:

K6R1016V1D-TI10 Datasheet

Stock:

Yes

Quantity:

1200 PCS


Images are for reference only:

K6R1016V1D-TI10.jpg

Product Specifications 

Categories

Integrated Circuits (ICs)

IC Chips

Address Bus Width

16 bit

Brand

Samsung

REACH Compliant

Yes

Density

1 Mbit

Density in Bits

1048576 bit

ECCN

3A991.b.2.b

HTSUSA

8542320041

I/O Type

COMMON

JESD-30 Code

R-PDSO-G44

JESD-609 Code

e0

Lead Finish(Plating)

SnPb

Lead Shape

Gull-wing

Mounting Type

Surface Mount

Maximum Access Time

10 ns

Maximum Operating Temperature

85 °C

Minimum Operating Temperature

-40 °C

Maximum Operating Supply Voltage

3.6 V

Typical Operating Supply Voltage

3.3 V

Minimum Operating Supply Voltage

3 V

Maximum Operating Current

75 mA

Maximum Standby Current

0.005 Amp

Minimum Standby Voltage

3 V

Memory Density

1048576 bit

Memory IC Type

STANDARD SRAM

Memory Width

16

Moisture Sensitivity Level

3

Number of Bits per Word

16 bit

Number of Functions

1

Number of Ports

1

Number of Words

65536 words

Number of Words Code

64K

Operating Mode

ASYNCHRONOUS

Organization

64KX16

Output Characteristics

3-STATE

Basic Package Type

Lead-Frame SMT

Package Family Name

SOP

Mfr Package Description

0.400 INCH, TSOP2-44

Package Body Material

PLASTIC/EPOXY

Package Code

TSOP2

Package Equivalence Code

TSOP44,.46,32

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE, THIN PROFILE

Parallel/Serial

PARALLEL

Power Supplies

3.3 V

Pin Count

44

PCB

44

Package Length

18.81(Max) mm

Package Width

10.16 mm

Package Height

1 mm

Seated Plane Height

1.2(Max) mm

Pin Pitch

0.8 mm

Sub Category

SRAMs

Supplier Cage Code

1542F

Timing Type

Asynchronous

Technology

CMOS

Temperature Grade

INDUSTRIAL

Terminal Finish

Tin/Lead (Sn/Pb)

Terminal Form

GULL WING

Terminal Position

DUAL


Datasheet PDF Download:

K6R1016V1D-TI10 PDF.png

BLOCK DIAGRAM

K6R1016V1D Block Diagram.png

Fig. 1 K6R1016V1D Block Diagram

PIN CONFIGURATION

PIN CONFIGURATION for K6R1016V1D.png

Fig. 2 PIN CONFIGURATION for K6R1016V1D

Description

The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA.

Features

Fast Access Time 8,10ns(Max.)

Low Power Dissipation

Single 3.3V Power Supply

TTL Compatible Inputs and Outputs

Fully Static Operation

- No Clock or Refresh required

Three State Outputs

Center Power/Ground Pin Configuration

Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16

Standard Pin Configuration

Operating in Commercial and Industrial Temperature range.

Other data sheets within the file:

Datasheet

K6R1016V1D-TI10

K6R1016V1D-TI10 series.png


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